Precise Electro-thermal Power Loss Model of a Three-level ANPC Inverter with Hybrid Si/SiC Switches

Hybrid Si/SiC switches constituting a parallel connection of lower current rated SiC MOSFET and higher Si IGBT are becoming very attractive solution for designing high frequency high-power density power electronic converters. Due to the complementary nature devices (smaller inverter cost smaller conduction loss) switching loss junction temperature capability), these novel switch device configurations enable good tradeoff between efficiency converter applications. One such recent application hybrid efficiency-cost optimization is an based ANPC proposed in Ref. [30]. In [30] topology structure, modulation strategy benefits presented. this paper precise electro-thermal model will be presented on operating characteristics switches. The development takes into account how sharing two internal their corresponding gate control method affects loss. A brief introduction structure operation principle first highlighted provide context readers then detailed description precision introduced validated using experimentally measured energy loss, data.